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KSD401Y
KSD401Y
GP BJT KSD401Y
onsemi
KSD401Y
--
Diodes, Transistors and Thyristors
GP BJT
KSD401Y.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.1(Max)
Product CategoryBipolar Power
Supplier PackageTO-220
Standard Package NameTO-220
Minimum DC Current Gain120@400mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)200
Maximum Transition Frequency (MHz)5(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)150
Maximum Collector-Emitter Saturation Voltage (V)1@50mA@500mA
Description
Trans GP BJT NPN 150V 2A 25000mW 3-Pin(3+Tab) TO-220 Bulk
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