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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BCW66GE6327XT
BCW66GE6327XT
GP BJT BCW66GE6327XT
Infineon
BCW66GE6327XT
--
Diodes, Transistors and Thyristors
GP BJT
BCW66GE6327XT.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle
Package Width1.3
Package Height1(Max)
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT-23
Minimum DC Current Gain110@10mA@1V|160@100mA@1V|40@500mA@1V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)330
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)20
Maximum Base Emitter Saturation Voltage (V)1.25@10mA@100mA|1.25@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@10mA@100mA|0.45@50mA@500mA
Description
Trans GP BJT NPN 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R
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