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MPS6521G
MPS6521G
GP BJT MPS6521G
onsemi
MPS6521G
--
Diodes, Transistors and Thyristors
GP BJT
MPS6521G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain300@2mA@10V|150@100uA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)50
Maximum Collector-Emitter Saturation Voltage (V)0.5@5mA@50mA
Description
Trans GP BJT NPN 25V 0.1A 625mW 3-Pin TO-92 Box
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