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BCX5210TC
BCX5210TC
GP BJT BCX5210TC
Diodes Incorporated
BCX5210TC
--
Diodes, Transistors and Thyristors
GP BJT
BCX5210TC.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
ConfigurationSingle Dual Collector
Product CategoryBipolar Power
Minimum DC Current Gain63@150mA@2V|25@500mA@2V|40@150mA@2V|25@5mA@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT PNP 60V 1A 2000mW
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