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BU508AFI
BU508AFI
GP BJT BU508AFI
STMicroelectronics
BU508AFI
--
Diodes, Transistors and Thyristors
GP BJT
BU508AFI.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width5.65
Package Height14.9
Package Length16.2
Product CategoryBipolar Power
Supplier PackageISOWATT218
Standard Package NameISOWATT218
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)50000
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)10
Maximum Transition Frequency (MHz)7(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)700
Maximum Base Emitter Saturation Voltage (V)1.3@2A@4.5A
Maximum Collector-Emitter Saturation Voltage (V)1@2A@4.5A
Description
Trans GP BJT NPN 700V 8A 50000mW 3-Pin(3+Tab) ISOWATT218
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