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BD159G
BD159G
GP BJT BD159G
onsemi
BD159G
--
Diodes, Transistors and Thyristors
GP BJT
BD159G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain30@50mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)20000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)375
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)350
Description
Trans GP BJT NPN 350V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box
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