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BD435STU
BD435STU
GP BJT BD435STU
onsemi
BD435STU
--
Diodes, Transistors and Thyristors
GP BJT
BD435STU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain40@10mA@5V|85@500mA@1V|50@2A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)36000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)32
Maximum Transition Frequency (MHz)3(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)32
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.2A@2A
Description
Trans GP BJT NPN 32V 4A 36000mW 3-Pin(3+Tab) TO-126 Tube
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