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BFX34
BFX34
GP BJT BFX34
STMicroelectronics
BFX34
--
Diodes, Transistors and Thyristors
GP BJT
BFX34.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
SVHC Exceeds ThresholdYes
Minimum DC Current Gain40@2A@2V|100(Typ)@1A@2V|75(Typ)@1.5A@0.6V
Number of Elements per Chip1
Maximum Power Dissipation (mW)870
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.6@0.5A@5A
Maximum Collector-Emitter Saturation Voltage (V)1@0.5A@5A
Description
Trans GP BJT NPN 60V 5A 870mW 3-Pin TO-39 Bag
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