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2SC4485T-AN
2SC4485T-AN
GP BJT 2SC4485T-AN
onsemi
2SC4485T-AN
--
Diodes, Transistors and Thyristors
GP BJT
2SC4485T-AN.pdf
Specification
Product AttributeAttribute Value
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.5
Package Height4.5
Package Length6.9
Product CategoryBipolar Power
Supplier PackageNMP
Minimum DC Current Gain200@100mA@2V|30@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)900
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA|0.3@50mA@500mA
Description
Trans GP BJT NPN 50V 1A 900mW 3-Pin NMP
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