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GP BJT BSS79CE6433XT
Infineon
BSS79CE6433XT
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Obsolete |
| Configuration | Single |
| Product Category | Bipolar Small Signal |
| Minimum DC Current Gain | 35@100uA@10V|50@1mA@10V|40@500mA@10V|75@10mA@10V|100@150mA@10V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 330 |
| Maximum DC Collector Current (A) | 0.8 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 75 |
| Maximum Transition Frequency (MHz) | 250(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@15mA@150mA|2@50mA@500mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@15mA@150mA|1.3@50mA@500mA |
| Description |
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