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BULD39D-1
BULD39D-1
GP BJT BULD39D-1
STMicroelectronics
BULD39D-1
--
Diodes, Transistors and Thyristors
GP BJT
BULD39D-1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.4(Max)
Package Height6.2(Max)
Package Length6.6(Max)
Product CategoryBipolar Power
Supplier PackageIPAK
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Minimum DC Current Gain4@5A@10V|10@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)35000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)450
Maximum Base Emitter Saturation Voltage (V)1.3@0.5A@2.5A|1.1@0.2A@1A
Maximum Collector-Emitter Saturation Voltage (V)1.1@0.5A@2.5A|0.5@0.2A@1A
Description
Trans GP BJT NPN 450V 4A 35000mW 3-Pin(3+Tab) IPAK Tube
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