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GP BJT PBSS4350SS,115
Nexperia
PBSS4350SS,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| PCB changed | 8 |
| Part Status | Obsolete |
| Configuration | Dual Dual Collector |
| Package Width | 4(Max) |
| Package Height | 1.45(Max) |
| Package Length | 5(Max) |
| Product Category | Bipolar Power |
| Supplier Package | SO |
| Minimum DC Current Gain | 300@100mA@2V|300@500mA@2V|300@1A@2V|200@2A@2V|120@2.7A@2V |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 2.7 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@100mA@2A|1.2@270mA@2.7A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.16@50mA@1A|0.28@100mA@2A|0.26@200mA@2A|0.34@270mA@2.7A|0.08@50mA@0.5A |
| Description |
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