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BUV26G
BUV26G
GP BJT BUV26G
onsemi
BUV26G
--
Diodes, Transistors and Thyristors
GP BJT
BUV26G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.83(Max)
Package Height9.28(Max)
Package Length10.53(Max)
Product CategoryBipolar Power
Supplier PackageTO-220AB
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)85000
Maximum DC Collector Current (A)20
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)180
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)90
Maximum Base Emitter Saturation Voltage (V)2@1.2A@12A
Maximum Collector-Emitter Saturation Voltage (V)1.5@1.2A@12A|0.6@0.4A@6A
Description
Trans GP BJT NPN 90V 20A 85000mW 3-Pin(3+Tab) TO-220AB Tube
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