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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N3868S
JANTXV2N3868S
GP BJT JANTXV2N3868S
Microchip Technology
JANTXV2N3868S
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N3868S.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain35@500mA@1V|30@1.5A@2V|20@2.5A@3V|20@3A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1@50mA@500mA|1.4@150mA@1.5A|2@250mA@2.5A
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA|0.75@150mA@1.5A|1.5@250mA@2.5A
Description
Trans GP BJT PNP 60V 0.03A 1000mW 3-Pin TO-39 Bag
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