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CPH5517-TL-E
CPH5517-TL-E
GP BJT CPH5517-TL-E
onsemi
CPH5517-TL-E
--
Diodes, Transistors and Thyristors
GP BJT
CPH5517-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN|PNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeGull-wing
PCB changed5
Part StatusActive
ConfigurationDual Common Base
Package Width1.6
Package Height0.9
Package Length2.9
Product CategoryBipolar Power
Supplier PackageCPH
Minimum DC Current Gain200@100mA@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)900
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60@NPN|50@PNP
Maximum Transition Frequency (MHz)420(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@10mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.19@10mA@500mA|0.135@6mA@300mA@NPN|0.43@10mA@500mA|0.22@6mA@300mA@PNP
Description
Trans GP BJT NPN/PNP 50V 1A 900mW 5-Pin CPH T/R
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