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CPH5518-TL-H
CPH5518-TL-H
GP BJT CPH5518-TL-H
onsemi
CPH5518-TL-H
--
Diodes, Transistors and Thyristors
GP BJT
CPH5518-TL-H.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN|PNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeGull-wing
PCB changed5
Part StatusObsolete
ConfigurationDual Common Emitter
Package Width1.6
Package Height0.9
Package Length2.9
Product CategoryBipolar Power
Supplier PackageCPH
Minimum DC Current Gain200@100mA@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)1200
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80@NPN|50@PNP
Maximum Transition Frequency (MHz)420(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@10mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.19@10mA@500mA|0.135@6mA@300mA@NPN|0.38@10mA@500mA|0.2@6mA@300mA@PNP
Description
Trans GP BJT NPN/PNP 50V 1A 1200mW 5-Pin CPH T/R
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