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D45C12G
D45C12G
GP BJT D45C12G
onsemi
D45C12G
--
Diodes, Transistors and Thyristors
GP BJT
D45C12G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.83(Max)
Package Height9.28(Max)
Package Length10.53(Max)
Product CategoryBipolar Power
Supplier PackageTO-220AB
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Minimum DC Current Gain40@0.2A@1V|20@1A@1V|20@2A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)30000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)5
Maximum Transition Frequency (MHz)40(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.3@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@1A
Description
Trans GP BJT PNP 80V 4A 30000mW 3-Pin(3+Tab) TO-220AB Tube
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