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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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DXT2011P5-13
DXT2011P5-13
GP BJT DXT2011P5-13
Diodes Incorporated
DXT2011P5-13
--
Diodes, Transistors and Thyristors
GP BJT
DXT2011P5-13.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.37
Package Height1.1(Max)
Package Length3.97
Product CategoryBipolar Power
Supplier PackagePowerDI 5
Minimum DC Current Gain100@10mA@2V|100@2A@2V|30@5A@2V|10@10A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)3200
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)200
Maximum Transition Frequency (MHz)130(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)20
Maximum Base Emitter Saturation Voltage (V)1.12@500mA@5A
Maximum Collector-Emitter Saturation Voltage (V)0.035@5mA@0.1A|0.065@100mA@1A|0.125@100mA@2A|0.22@500mA@5A
Description
Trans GP BJT NPN 100V 6A 3200mW 3-Pin(3+Tab) PowerDI 5 T/R
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