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NSVBCP68T1G
NSVBCP68T1G
GP BJT NSVBCP68T1G
onsemi
NSVBCP68T1G
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Diodes, Transistors and Thyristors
GP BJT
NSVBCP68T1G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT-223
SVHC Exceeds ThresholdYes
Minimum DC Current Gain50@5mA@10V|60@1A@1V|85@500mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)25
Maximum Transition Frequency (MHz)60(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)20
Maximum Collector-Emitter Saturation Voltage (V)0.5@100mA@1A
Description
Trans GP BJT NPN 20V 1A 1500mW 4-Pin(3+Tab) SOT-223 T/R
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