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DXTN3C60PSQ-13
DXTN3C60PSQ-13
GP BJT DXTN3C60PSQ-13
Diodes Incorporated
DXTN3C60PSQ-13
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
PCB changed8
Part StatusActive
ConfigurationSingle Quad Collector Triple Emitter
Package Width5.8
Package Height1.05(Max)
Package Length4.9
Product CategoryBipolar Power
Supplier PackagePowerDI EP
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@500mA@2V|200@1A@2V|100@2A@2V|50@3A@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)140(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1@100mA@1A|1.2@200mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.12@50mA@1A|0.27@300mA@3A
Description
Trans GP BJT NPN 60V 3A 2500mW 8-Pin PowerDI EP T/R
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