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DZT853-13
DZT853-13
GP BJT DZT853-13
Diodes Incorporated
DZT853-13
--
Diodes, Transistors and Thyristors
GP BJT
DZT853-13.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT-223
Minimum DC Current Gain100@10mA@2V|100@2A@2V|50@4A@2V|20@10A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)200
Maximum Transition Frequency (MHz)130(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.25@500mA@5A
Maximum Collector-Emitter Saturation Voltage (V)0.05@5mA@0.1A|0.15@100mA@2A|0.34@500mA@5A
Description
Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R
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