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FJBE2150DTU
FJBE2150DTU
GP BJT FJBE2150DTU
onsemi
FJBE2150DTU
--
Diodes, Transistors and Thyristors
GP BJT
FJBE2150DTU.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width9.85(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryBipolar Power
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Minimum DC Current Gain20@0.4A@3V|20@5mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)110000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)12
Maximum Collector Base Voltage (V)1250
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)800
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA|1.2@0.4A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.16(Typ)@0.05A@0.25A|0.12(Typ)@0.167A@0.5A|0.25(Typ)@0.33A@1A
Description
Trans GP BJT NPN 800V 2A 110000mW 3-Pin(2+Tab) D2PAK Tube
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