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GP BJT FMMT620QTA
Diodes Incorporated
FMMT620QTA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | Yes |
| Part Status | Active |
| Configuration | Single |
| Product Category | Bipolar Small Signal |
| Minimum DC Current Gain | 20@3A@2V|200@10mA@2V|300@200mA@2V|110@1A@2V|60@1.5A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 806 |
| Maximum DC Collector Current (A) | 1.5 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 160(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Base Emitter Saturation Voltage (V) | 1@50mA@1.5A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.02@10mA@0.1A|0.06@50mA@0.5A|0.185@20mA@1A|0.2@50mA@1.5A |
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