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GP BJT ZXT11N20DFTA
Diodes Incorporated
ZXT11N20DFTA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 1.4(Max) |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT-23 |
| Minimum DC Current Gain | 200@10mA@2V|300@100mA@2V|250@1A@2V|150@3A@2V|100@5A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 806 |
| Maximum DC Collector Current (A) | 2.5 |
| Maximum Emitter Base Voltage (V) | 7.5 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 160(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 1@250mA@2.5A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.012@10mA@0.1A|0.1@10mA@1A|0.06@100mA@1A|0.13@250mA@2.5A |
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