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FSB660
FSB660
GP BJT FSB660
onsemi
FSB660
--
Diodes, Transistors and Thyristors
GP BJT
FSB660.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.4
Package Height1.02(Max)
Package Length2.92
Product CategoryBipolar Small Signal
Supplier PackageSuperSOT
Minimum DC Current Gain70@100mA@2V|80@1A@2V|40@2A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)75(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.25@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@100mA@1A|0.35@200mA@2A
Description
Trans GP BJT PNP 60V 2A 500mW 3-Pin SuperSOT
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