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GP BJT JAN2N3725
Microchip Technology
JAN2N3725
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Diameter | 9.4(Max) |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Height | 6.6(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-39 |
| Standard Package Name | TO-205-AF |
| Minimum DC Current Gain | 30@10mA@1V|60@100mA@1V|40@300mA@1V|35@500mA@1V|25@800mA@2V|30@1A@5V|20@800mA@2V|25@1A@5V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 300(Min) |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Collector Cut-Off Current (nA) | 1700 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@1mA@10mA|0.26@10mA@100mA|0.4@30mA@300mA|0.52@50mA@500mA|0.8@80mA@800mA|0.95@100mA@1A |
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