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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N2484UB
JAN2N2484UB
GP BJT JAN2N2484UB
Microchip Technology
JAN2N2484UB
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N2484UB.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryBipolar Small Signal
Supplier PackageCase UB
Minimum DC Current Gain45@1uA@5V|200@10uA@5V|225@100uA@5V|250@500uA@5V|250@1mA@5V|225@10mA@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Collector-Emitter Saturation Voltage (V)0.3@100uA@1mA
Description
Trans GP BJT NPN 60V 0.05A 360mW 4-Pin Case UB Waffle
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