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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N5039
JAN2N5039
GP BJT JAN2N5039
Microchip Technology
JAN2N5039
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N5039.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.42
Package Height7.92
Package Length39.29
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
Minimum DC Current Gain30@0.5A@5V|30@2A@5V|15@10A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Maximum DC Collector Current (A)20
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)125
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)75
Maximum Base Emitter Saturation Voltage (V)3.3@5A@20A
Maximum Collector-Emitter Saturation Voltage (V)1@1A@10A|2.5@5A@20A
Description
Trans GP BJT NPN 75V 20A 140000mW 3-Pin(2+Tab) TO-3 Tray
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