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MJB44H11G
MJB44H11G
GP BJT MJB44H11G
onsemi
MJB44H11G
--
Diodes, Transistors and Thyristors
GP BJT
MJB44H11G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Product CategoryBipolar Power
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Minimum DC Current Gain60@2A@1V|40@4A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)5
Maximum Transition Frequency (MHz)50(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.5@0.8A@8A
Maximum Collector-Emitter Saturation Voltage (V)1@0.4A@8A
Description
Trans GP BJT NPN 80V 10A 2000mW 3-Pin(2+Tab) D2PAK Tube
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