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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N6033
JAN2N6033
GP BJT JAN2N6033
Microchip Technology
JAN2N6033
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N6033.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.42
Package Height7.92
Package Length39.29
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
Minimum DC Current Gain10@40A@2V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Maximum DC Collector Current (A)40
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)150
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)120
Maximum Base Emitter Saturation Voltage (V)2@4A@40A
Maximum Collector-Emitter Saturation Voltage (V)1@4A@40A
Description
Trans GP BJT NPN 120V 40A 140000mW 3-Pin(2+Tab) TO-3 Tray
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