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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N6306
JAN2N6306
GP BJT JAN2N6306
Microchip Technology
JAN2N6306
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N6306.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.42
Package Height7.92
Package Length39.29
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
Minimum DC Current Gain15@3A@5V|4@8A@5V|15@0.5A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)500
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)250
Maximum Base Emitter Saturation Voltage (V)2.3@2A@8A
Maximum Collector-Emitter Saturation Voltage (V)5@2A@8A|0.8@0.6A@3A
Description
Trans GP BJT NPN 250V 8A 125000mW 3-Pin(2+Tab) TO-3 Tray
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