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JANKCB2N2907A
JANKCB2N2907A
GP BJT JANKCB2N2907A
Microchip Technology
JANKCB2N2907A
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
ConfigurationSingle
Product CategoryBipolar Small Signal
Minimum DC Current Gain75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.3@15mA@150mA|2.6@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA|1.6@50mA@500mA
Description
Trans GP BJT PNP 60V 0.6A 500mW
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