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JANS2N3440U4
JANS2N3440U4
GP BJT JANS2N3440U4
Microchip Technology
JANS2N3440U4
--
Diodes, Transistors and Thyristors
GP BJT
JANS2N3440U4.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.72(Max)
Package Height1.91(Max)
Package Length3.94(Max)
Product CategoryBipolar Power
Supplier PackageCase U4
Minimum DC Current Gain40@20mA@10V|30@2mA@10V|10@0.2mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)300
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)250
Maximum Base Emitter Saturation Voltage (V)1.3@4mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@4mA@50mA
Description
Trans GP BJT NPN 250V 1A 800mW 3-Pin Case U4 Tray
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