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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N5661U3
JANTXV2N5661U3
GP BJT JANTXV2N5661U3
Microchip Technology
JANTXV2N5661U3
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N5661U3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width10.16
Package Length7.52
Product CategoryBipolar Power
Supplier PackageSMD-0.5
Standard Package NameSMD
Minimum DC Current Gain25@50mA@2V|25@0.5A@5V|15@1A@5V|5@2A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)400
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)300
Maximum Base Emitter Saturation Voltage (V)1.5@0.4A@2A|1.2@0.1A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.4@0.1A@1A|0.8@0.4A@2A
Description
Trans GP BJT NPN 300V 2A 2000mW 3-Pin SMD-0.5 Tray
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