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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANS2N5153L
JANS2N5153L
GP BJT JANS2N5153L
Microchip Technology
JANS2N5153L
--
Diodes, Transistors and Thyristors
GP BJT
JANS2N5153L.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypePNP
EU RoHSCompliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5
Standard Package NameTO
Minimum DC Current Gain40@5A@5V|70@2.5A@5V|50@50mA@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5.5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.45@250mA@2.5A|2.2@500mA@5A
Maximum Collector-Emitter Saturation Voltage (V)0.75@250mA@2.5A|1.5@500mA@5A
Description
Trans GP BJT PNP 80V 2A 1000mW 3-Pin TO-5 Tray
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