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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANSR2N3637
JANSR2N3637
GP BJT JANSR2N3637
Microchip Technology
JANSR2N3637
--
Diodes, Transistors and Thyristors
GP BJT
JANSR2N3637.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Minimum DC Current Gain55@0.1mA@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)175
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)175
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|0.9@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@1mA@10mA|0.6@5mA@50mA
Description
Trans GP BJT PNP 175V 1A 1000mW 3-Pin TO-39 Tray
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