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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTX2N3739
JANTX2N3739
GP BJT JANTX2N3739
Microchip Technology
JANTX2N3739
--
Diodes, Transistors and Thyristors
GP BJT
JANTX2N3739.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Product CategoryBipolar Power
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain30@10mA@10V|30@50mA@10V|40@100mA@10V|25@250mA@10V|10@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)20000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)325
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)300
Maximum Collector-Emitter Saturation Voltage (V)0.75@10mA@100mA|2.5@25mA@250mA
Description
Trans GP BJT NPN 300V 1A 20000mW 3-Pin(2+Tab) TO-66 Tray
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