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JANTX2N3765
JANTX2N3765
GP BJT JANTX2N3765
Microchip Technology
JANTX2N3765
--
Diodes, Transistors and Thyristors
GP BJT
JANTX2N3765.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter5.84(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height2.7(Max)
Product CategoryBipolar Power
Supplier PackageTO-46
Standard Package NameTO
Minimum DC Current Gain35@10mA@1V|40@150mA@1V|40@500mA@1V|20@1A@1.5V|20@1.5A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|1@15mA@150mA|1.2@50mA@500mA|1.4@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.1@1mA@10mA|0.22@15mA@150mA|0.5@50mA@500mA|0.9@100mA@1A
Description
Trans GP BJT PNP 60V 1.5A 500mW 3-Pin TO-46 Bag
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