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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTX2N5666S
JANTX2N5666S
GP BJT JANTX2N5666S
Microchip Technology
JANTX2N5666S
--
Diodes, Transistors and Thyristors
GP BJT
JANTX2N5666S.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain5@5A@5V|40@0.5A@2V|40@1A@5V|15@3A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1200
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)250
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)200
Maximum Base Emitter Saturation Voltage (V)1.5@1A@5A|1.2@0.3A@3A
Maximum Collector-Emitter Saturation Voltage (V)1@1A@5A|0.4@0.3A@3A
Description
Trans GP BJT NPN 200V 5A 1200mW 3-Pin TO-39 Bag
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