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GP BJT JANTX2N5794U
Microchip Technology
JANTX2N5794U
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Bag |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 4.45(Max) |
| Package Height | 2.54(Max) |
| Package Length | 6.35(Max) |
| Product Category | Bipolar Power |
| Supplier Package | CSMD |
| Standard Package Name | SMD |
| Minimum DC Current Gain | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@300mA@10V|50@150mA@1V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 600 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 75 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@15mA@150mA|1.8@30mA@300mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@15mA@150mA|0.9@30mA@300mA |
| Description |
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