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JANTX2N6250
JANTX2N6250
GP BJT JANTX2N6250
Microchip Technology
JANTX2N6250
--
Diodes, Transistors and Thyristors
GP BJT
JANTX2N6250.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width26.42
Package Height7.92
Package Length39.29
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
Minimum DC Current Gain8@10A@3V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)6000
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)375
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)275
Maximum Base Emitter Saturation Voltage (V)2.25@1.25A@10A
Maximum Collector-Emitter Saturation Voltage (V)1.5@1.25A@10A
Description
Trans GP BJT NPN 275V 10A 6000mW 3-Pin(2+Tab) TO-3 Tray
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