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JANTXV2N2222AUBP
JANTXV2N2222AUBP
GP BJT JANTXV2N2222AUBP
Microchip Technology
JANTXV2N2222AUBP
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusUnconfirmed
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryBipolar Power
Supplier PackageCase UB
Minimum DC Current Gain50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB
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