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JANTXV2N3838
JANTXV2N3838
GP BJT JANTXV2N3838
Microchip Technology
JANTXV2N3838
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N3838.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN|PNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count6
AutomotiveNo
Lead ShapeFlat
PCB changed6
Part StatusActive
ConfigurationDual
Product CategoryBipolar Small Signal
Supplier PackageFPAK
Standard Package NameFPAK
Minimum DC Current Gain50@150mA@1V|35@0.1mA@10V|50@1mA@10V|100@150mA@10V|35@300mA@10V|75@10mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip2
Maximum Power Dissipation (mW)350
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.25@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA
Description
Trans GP BJT NPN/PNP 40V 0.6A 350mW 6-Pin FPAK Tube
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