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MPS6601RLRAG
MPS6601RLRAG
GP BJT MPS6601RLRAG
onsemi
MPS6601RLRAG
--
Diodes, Transistors and Thyristors
GP BJT
MPS6601RLRAG.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain50@100mA@1V|50@500mA@1V|30@1000mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)25
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.6@100mA@1000mA
Description
Trans GP BJT NPN 25V 1A 625000mW 3-Pin TO-92 T/R
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