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GP BJT JANTXV2N5012S
Microchip Technology
JANTXV2N5012S
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Diameter | 9.4(Max) |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Bag |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Height | 6.6(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-39 |
| Standard Package Name | TO-205-AF |
| Minimum DC Current Gain | 30@25mA@10V|10@5mA@10V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 700 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Base Emitter Saturation Voltage (V) | 1@5mA@25mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.6@5mA@25mA |
| Description |
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