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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N7373
JANTXV2N7373
GP BJT JANTXV2N7373
Microchip Technology
JANTXV2N7373
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N7373.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width6.6
Package Height20.19(Max) - 6.48
Package Length13.72
Product CategoryBipolar Power
Supplier PackageTO-254
Standard Package NameTO
Minimum DC Current Gain50@0.05A@5V|70@2.5A@5V|40@5A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)4000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.45@0.25A@2.5A|2.2@0.5A@5A
Maximum Collector-Emitter Saturation Voltage (V)1.5@500mA@5A|0.75@0.25mA@2.5mA
Description
Trans GP BJT NPN 80V 5A 4000mW 3-Pin(3+Tab) TO-254
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