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GP BJT KSA1220AYSTSTU
onsemi
KSA1220AYSTSTU
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Rail |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 3.45(Max) |
| Package Height | 11.2(Max) |
| Package Length | 8.3(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-126 |
| Minimum DC Current Gain | 160@300mA@5V |
| Maximum Base Current (A) | 0.3 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1200 |
| Maximum DC Collector Current (A) | 1.2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 160 |
| Maximum Transition Frequency (MHz) | 175(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 120 |
| Maximum Collector Cut-Off Current (nA) | 1000 |
| Maximum Base Emitter Saturation Voltage (V) | 1.3@0.2A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.7@0.2A@1A |
| Description |
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