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KSB772YS
KSB772YS
GP BJT KSB772YS
onsemi
KSB772YS
--
Diodes, Transistors and Thyristors
GP BJT
KSB772YS.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain160@1A@2V
Maximum Base Current (A)0.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)80(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)30
Maximum Collector Cut-Off Current (nA)1000
Maximum Base Emitter Saturation Voltage (V)2@0.2A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.2A@2A
Description
Trans GP BJT PNP 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Bag
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