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KSC1173YTSTUA
KSC1173YTSTUA
GP BJT KSC1173YTSTUA
onsemi
KSC1173YTSTUA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.83(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryBipolar Power
Supplier PackageTO-220
Minimum DC Current Gain120@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)10000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Collector-Emitter Saturation Voltage (V)0.8@0.2A@2A
Description
Trans GP BJT NPN 30V 3A 10000mW 3-Pin(3+Tab) TO-220 Tube
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