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MAT020000C
MAT020000C
GP BJT MAT020000C
ADI
MAT020000C
--
Diodes, Transistors and Thyristors
GP BJT
MAT020000C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusActive
ConfigurationDual
Product CategoryBipolar Small Signal
Minimum DC Current Gain500@1mA|275@1mA|500@100uA|225@100uA|400@10uA|175@10uA|300@1uA|150@1uA
Number of Elements per Chip2
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.02
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)0.2
Maximum Collector-Emitter Saturation Voltage (V)0.1@100uA@1mA
Description
Trans GP BJT NPN 40V 0.02A 500mW Tray
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